FDMC8030 vs FDMC86116LZ
This in-depth comparison of the FDMC8030 and FDMC86116LZ provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
Description
MOSFET 2N-CH 40V 12A 8PWR33
MOSFET N-CH 100V 3.3A/7.5A 8MLP
Series
PowerTrench®
PowerTrench®
Part Status
Obsolete
Active
Base Product Number
FDMC80
FDMC86116
FET Type
-
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40V
100 V
Current - Continuous Drain (Id) @ 25°C
12A
3.3A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
4.5V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 12A, 10V
103mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250µA
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
6 nC @ 10 V
Vgs (Max)
-
±20V
Input Capacitance (Ciss) (Max) @ Vds
1975pF @ 20V
310 pF @ 50 V
Power Dissipation (Max)
-
2.3W (Ta), 19W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Packaging
Cut Tape (CT), Tape & Reel (TR)
Cut Tape (CT), Tape & Reel (TR)
Configuration
2 N-Channel (Dual)
-
FET Feature
Logic Level Gate
-
Power - Max
800mW
-
