FDMS8018 vs FDMS86500DC Comparison
This in-depth comparison of the FDMS8018 and FDMS86500DC provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
TDFN-8
Description
MOSFET N-CH 30V 30A/120A 8PQFN
N-CHANNEL DUAL COOLTM 56 POWER T
Series
PowerTrench®
Dual Cool™, PowerTrench®
Part Status
Active
Active
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
60 V
Current - Continuous Drain(Id) @ 25°C
-
29A (Ta), 108A (Tc)
Drive Voltage(Max Rds On Min Rds On)
-
8V, 10V
Rds On(Max) @ Id Vgs
-
2.3mOhm @ 29A, 10V
Vgs(th)(Max) @ Id
-
4.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
-
107 nC @ 10 V
Vgs(Max)
-
±20V
Input Capacitance(Ciss)(Max) @ Vds
-
7680 pF @ 30 V
Power Dissipation (Max)
2.5W (Ta), 83W (Tc)
3.2W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Base Product Number
FDMS80
-
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 120A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
1.8mOhm @ 30A, 10V
-
Vgs(th) (Max) @ Id
3V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
5235 pF @ 15 V
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
