FDMS86163P vs FDMS86181
This in-depth comparison of the FDMS86163P and FDMS86181 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
TDFN-8
TDFN-8
Description
MOSFET P-CH 100V 7.9A/50A 8PQFN
MOSFET N-CH 100V 44A/124A 8PQFN
Series
PowerTrench®
PowerTrench®
ProductStatus
Active
Active
FETType
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)
100 V
100 V
Current-ContinuousDrain(Id)@25°C
7.9A (Ta), 50A (Tc)
44A (Ta), 124A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
6V, 10V
6V, 10V
RdsOn(Max)@IdVgs
22mOhm @ 7.9A, 10V
4.2mOhm @ 44A, 10V
Vgs(th)(Max)@Id
4V @ 250µA
4V @ 250µA
GateCharge(Qg)(Max)@Vgs
59 nC @ 10 V
59 nC @ 10 V
Vgs(Max)
±25V
±20V
InputCapacitance(Ciss)(Max)@Vds
4085 pF @ 50 V
4125 pF @ 50 V
PowerDissipation(Max)
2.5W (Ta), 104W (Tc)
2.5W (Ta), 125W (Tc)
OperatingTemperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
MountingType
Surface Mount
Surface Mount
