FDMS86163P vs FDMS8050ET30 Comparison
This in-depth comparison of the FDMS86163P and FDMS8050ET30 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
TDFN-8
TDFN-8
Description
MOSFET P-CH 100V 7.9A/50A 8PQFN
MOSFET N-CH 30V 55A/423A POWER56
Series
PowerTrench®
PowerTrench®
Part Status
Active
Not For New Designs
FET Type
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
30 V
Current - Continuous Drain(Id) @ 25°C
7.9A (Ta), 50A (Tc)
55A (Ta), 423A (Tc)
Drive Voltage(Max Rds On Min Rds On)
6V, 10V
4.5V, 10V
Rds On(Max) @ Id Vgs
22mOhm @ 7.9A, 10V
0.65mOhm @ 55A, 10V
Vgs(th)(Max) @ Id
4V @ 250µA
3V @ 750µA
Gate Charge(Qg)(Max) @ Vgs
59 nC @ 10 V
285 nC @ 10 V
Vgs(Max)
±25V
±20V
Input Capacitance(Ciss)(Max) @ Vds
4085 pF @ 50 V
22610 pF @ 15 V
Power Dissipation (Max)
2.5W (Ta), 104W (Tc)
3.3W (Ta), 180W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Surface Mount
