GD25LE64CLIGR vs GD25LE16CLIGR

This in-depth comparison of the GD25LE64CLIGR and GD25LE16CLIGR provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

GD25LE64CLIGR

GigaDevice Semiconductor (HK) Limited

Lifecycle
Active
Stock
2679 PCS
Package
WLSCP-21
Series
Memory
+BOM RFQ
Part B

GD25LE16CLIGR

GigaDevice Semiconductor (HK) Limited

Lifecycle
Active
Stock
7991 PCS
Package
WLSCP-21
Series
Memory
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification GD25LE64CLIGR GD25LE16CLIGR
Part Status Active Active
Memory Type Non-Volatile Non-Volatile
Memory Format FLASH FLASH
Technology FLASH - NOR FLASH - NOR
Memory Size 64Mb (8M x 8) 16Mb (2M x 8)
Memory Interface SPI - Quad I/O SPI - Quad I/O
Clock Frequency 133 MHz 104 MHz
Write Cycle Time - Word Page 2.4ms 50µs, 2.4ms
Voltage - Supply 1.65V ~ 2V 1.65V ~ 2.1V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount
Compare RFQ