IR2110PBF vs IR2118 Comparison

This in-depth comparison of the IR2110PBF and IR2118 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IR2110PBF

+BOM

2445 PCS | Infineon Technologies
IR2118

+BOM

6707 PCS | Infineon Technologies
Package DIP-14 DIP-8
Description IC GATE DRVR HALF-BRIDGE 14DIP IC GATE DRVR HIGH-SIDE 8DIP
Part Status Active Obsolete
Driven Configuration Half-Bridge High-Side
Channel Type Independent Single
Number of Drivers 2 1
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 3.3V ~ 20V 10V ~ 20V
Logic Voltage - VILVIH 6V, 9.5V 6V, 9.5V
Current - Peak Output(Source Sink) 2A, 2A 250mA, 500mA
Input Type Non-Inverting Inverting
High Side Voltage - Max(Bootstrap) 500 V 600 V
Rise / Fall Time(Typ) 25ns, 17ns 80ns, 40ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Comparison Model : IR2110PBF IR2118

+BOM RFQ