IR2117STRPBF vs IR2110STR

This in-depth comparison of the IR2117STRPBF and IR2110STR provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IR2117STRPBF

Infineon Technologies

Lifecycle: Active
Stock: 1294 PCS
Package: SOIC 8N
Series: PMIC - Gate Drivers

+BOM RFQ

Part B

IR2110STR

Infineon Technologies

Lifecycle: Active
Stock: 9490 PCS
Package: SOIC-16
Series: PMIC - Gate Drivers

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IR2117STRPBF	IR2110STR
Part Status	Active	Obsolete
Driven Configuration	High-Side	Half-Bridge
Channel Type	Single	Independent
Number of Drivers	1	2
Gate Type	IGBT, N-Channel MOSFET	IGBT, N-Channel MOSFET
Voltage - Supply	10V ~ 20V	3.3V ~ 20V
Logic Voltage - VILVIH	6V, 9.5V	6V, 9.5V
Current - Peak Output(Source Sink)	250mA, 500mA	2A, 2A
Input Type	Non-Inverting	Non-Inverting
High Side Voltage - Max(Bootstrap)	600 V	500 V
Rise / Fall Time(Typ)	80ns, 40ns	25ns, 17ns
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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