IR2117STRPBF vs IR2110STRPBF Comparison
This in-depth comparison of the IR2110STRPBF and IR2117STRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SOIC 16W
SOIC 8N
Description
IC GATE DRVR HALF-BRIDGE 16SOIC
IC GATE DRVR HIGH-SIDE 8SOIC
Part Status
Active
Active
Driven Configuration
Half-Bridge
High-Side
Channel Type
Independent
Single
Number of Drivers
2
1
Gate Type
IGBT, N-Channel MOSFET
IGBT, N-Channel MOSFET
Voltage - Supply
3.3V ~ 20V
10V ~ 20V
Logic Voltage - VILVIH
6V, 9.5V
6V, 9.5V
Current - Peak Output(Source Sink)
2A, 2A
250mA, 500mA
Input Type
Non-Inverting
Non-Inverting
High Side Voltage - Max(Bootstrap)
500 V
600 V
Rise / Fall Time(Typ)
25ns, 17ns
80ns, 40ns
Operating Temperature
-40°C ~ 150°C (TJ)
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
