IRF1404PBF vs IRF1405PBF

This in-depth comparison of the IRF1404PBF and IRF1405PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IRF1404PBF

Infineon Technologies

Lifecycle
Active
Stock
2816 PCS
Package
TO-220
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

IRF1405PBF

Infineon Technologies

Lifecycle
Active
Stock
6261 PCS
Package
TO-220
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF1404PBF IRF1405PBF
Series HEXFET® HEXFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 55 V
Current - Continuous Drain(Id) @ 25°C 202A (Tc) 169A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 4mOhm @ 121A, 10V 5.3mOhm @ 101A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 196 nC @ 10 V 260 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 5669 pF @ 25 V 5480 pF @ 25 V
Power Dissipation (Max) 333W (Tc) 330W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
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