IRF530NPBF vs IRF530 Comparison

This in-depth comparison of the IRF530 and IRF530NPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRF530

+BOM

1420 PCS | STMicroelectronics
IRF530NPBF

+BOM

7755 PCS | Infineon Technologies
Package TO-220-3 TO-220
Description MOSFET N-CH 100V 14A TO220AB MOSFET N-CH 100V 17A TO220AB
Series STripFET™ II HEXFET®
Part Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain(Id) @ 25°C 14A (Tc) 17A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 160mOhm @ 7A, 10V 90mOhm @ 9A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 21 nC @ 10 V 37 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 458 pF @ 25 V 920 pF @ 25 V
Power Dissipation (Max) 60W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Comparison Model : IRF530 IRF530NPBF

+BOM RFQ