IRF530PBF vs IRF530

This in-depth comparison of the IRF530 and IRF530PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRF530

+BOM

1420 PCS | STMicroelectronics
IRF530PBF

+BOM

6309 PCS | Vishay Siliconix
Package TO-220-3 TO-220-3
Description MOSFET N-CH 100V 14A TO220AB MOSFET N-CH 100V 14A TO220AB
Series STripFET™ II -
ProductStatus Obsolete Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V 100 V
Current-ContinuousDrain(Id)@25°C 14A (Tc) 14A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 160mOhm @ 7A, 10V 160mOhm @ 8.4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 21 nC @ 10 V 26 nC @ 10 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 458 pF @ 25 V 670 pF @ 25 V
PowerDissipation(Max) 60W (Tc) 88W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole
Comparison Model : IRF530 IRF530PBF

+BOM RFQ