IRF5305PBF vs IRF530

This in-depth comparison of the IRF5305PBF and IRF530 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IRF5305PBF

Infineon Technologies

Lifecycle
Active
Stock
7745 PCS
Package
TO-220
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

IRF530

STMicroelectronics

Lifecycle
Active
Stock
1420 PCS
Package
TO-220-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF5305PBF IRF530
Series HEXFET® STripFET™ II
Part Status Active Obsolete
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 100 V
Current - Continuous Drain(Id) @ 25°C 31A (Tc) 14A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 60mOhm @ 16A, 10V 160mOhm @ 7A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 63 nC @ 10 V 21 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 1200 pF @ 25 V 458 pF @ 25 V
Power Dissipation (Max) 110W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
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