IRF7104TRPBF vs IRF7106 Comparison
This in-depth comparison of the IRF7104TRPBF and IRF7106 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SOIC-8
SOIC-8
Description
MOSFET 2P-CH 20V 2.3A 8-SOIC
MOSFET N/P-CH 20V 3A/2.5A 8-SOIC
Supplier
Infineon Technologies
Infineon Technologies
Series
HEXFET®
HEXFET®
Part Status
Active
Obsolete
FET Type
2 P-Channel (Dual)
N and P-Channel
FET Feature
Logic Level Gate
Standard
Drain to Source Voltage (Vdss)
20V
20V
Current - Continuous Drain(Id) @ 25°C
2.3A
3A, 2.5A
Rds On(Max) @ Id Vgs
250mOhm @ 1A, 10V
125mOhm @ 1A, 10V
Vgs(th)(Max) @ Id
3V @ 250µA
1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
25nC @ 10V
25nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds
290pF @ 15V
300pF @ 15V
Power - Max
2W
2W
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
Surface Mount
