IRF7204TRPBF vs IRF7201TRPBF
This in-depth comparison of the IRF7201TRPBF and IRF7204TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SOIC-8
Description
MOSFET N-CH 30V 7.3A 8SO
MOSFET P-CH 20V 5.3A 8SO
Series
HEXFET®
HEXFET®
Part Status
Obsolete
-
Base Product Number
IRF7201
-
FET Type
N-Channel
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
-
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
30mOhm @ 7.3A, 10V
-
Vgs(th) (Max) @ Id
1V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
-
Power Dissipation (Max)
2.5W (Tc)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
ProductStatus
-
Last Time Buy
FETType
-
P-Channel
DraintoSourceVoltage(Vdss)
-
20 V
Current-ContinuousDrain(Id)@25°C
-
5.3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)
-
4.5V, 10V
RdsOn(Max)@IdVgs
-
60mOhm @ 5.3A, 10V
Vgs(th)(Max)@Id
-
2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
25 nC @ 10 V
Vgs(Max)
-
±12V
InputCapacitance(Ciss)(Max)@Vds
-
860 pF @ 10 V
PowerDissipation(Max)
-
2.5W (Tc)
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
