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IRF7201TRPBF
+BOMMOSFET N-CH 30V 7.3A 8SO
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ManufacturerInfineon Technologies
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Mfr. Part #IRF7201TRPBF
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Datasheet IRF7201TRPBF DataSheet
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In Stock1619
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Specifications
| Attribute | Value |
| Series | HEXFET® |
| PartStatus | Obsolete |
| BaseProductNumber | IRF7201 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 7.3A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@Id,Vgs | 30mOhm @ 7.3A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 28 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 550 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Overview
Description
The IRF7201TRPBF is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management and switching applications. Manufactured by Infineon Technologies, it features two MOSFETs in a single package, facilitating compact circuit designs. This component is particularly suitable for applications in switching regulators, DC-DC converters, and power management for electronic devices.
Key characteristics of the IRF7201TRPBF include a low on-resistance, which minimizes power losses and enhances efficiency, and a fast switching speed, which is beneficial for high-frequency applications. It has a maximum drain-source voltage (V_ds) of 30V and can handle continuous drain currents up to 4.3A per channel, making it suitable for moderate power applications. The MOSFET comes in a standard SO-8 surface-mount package, facilitating easy integration into printed circuit boards (PCBs).
Overall, the IRF7201TRPBF is praised for its reliable performance, compact size, and versatility in various electronic applications, making it a popular choice for engineers and designers seeking efficient power management solutions.
Key characteristics of the IRF7201TRPBF include a low on-resistance, which minimizes power losses and enhances efficiency, and a fast switching speed, which is beneficial for high-frequency applications. It has a maximum drain-source voltage (V_ds) of 30V and can handle continuous drain currents up to 4.3A per channel, making it suitable for moderate power applications. The MOSFET comes in a standard SO-8 surface-mount package, facilitating easy integration into printed circuit boards (PCBs).
Overall, the IRF7201TRPBF is praised for its reliable performance, compact size, and versatility in various electronic applications, making it a popular choice for engineers and designers seeking efficient power management solutions.
Equivalent
The IRF7201TRPBF is a dual N-channel MOSFET. Equivalent products would include other dual N-channel MOSFETs with similar specifications, such as the IRF7319, BSI7201ND, or AO6402. When choosing an equivalent, ensure the voltage, current, and RDS(on) specifications match your application requirements. Always check the datasheet for pin compatibility and electrical characteristics.
Features
The IRF7201TRPBF is a dual N-channel MOSFET designed for applications requiring efficient power handling capabilities in compact form. Key features include:
1. Voltage and Current Ratings: It can handle a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 4.3A per channel.
2. On-Resistance: The MOSFET boasts a low on-resistance (Rds(on)) of 0.035 ohms, ensuring minimal power loss during operation.
3. Gate Threshold Voltage: It features a gate threshold voltage in the range of 1V to 3V, enabling it to operate efficiently with standard logic level gate inputs.
4. Package: Encased in a compact SO-8 surface mount package, the IRF7201TRPBF is suitable for space-constrained applications.
5. Thermal Performance: Its design supports efficient heat dissipation, which contributes to reliable performance under various thermal conditions.
6. Applications: Ideal for DC-DC converters, load switches, and other power management applications.
These features make the IRF7201TRPBF a reliable choice for designers looking to integrate efficient and compact power control solutions.
1. Voltage and Current Ratings: It can handle a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 4.3A per channel.
2. On-Resistance: The MOSFET boasts a low on-resistance (Rds(on)) of 0.035 ohms, ensuring minimal power loss during operation.
3. Gate Threshold Voltage: It features a gate threshold voltage in the range of 1V to 3V, enabling it to operate efficiently with standard logic level gate inputs.
4. Package: Encased in a compact SO-8 surface mount package, the IRF7201TRPBF is suitable for space-constrained applications.
5. Thermal Performance: Its design supports efficient heat dissipation, which contributes to reliable performance under various thermal conditions.
6. Applications: Ideal for DC-DC converters, load switches, and other power management applications.
These features make the IRF7201TRPBF a reliable choice for designers looking to integrate efficient and compact power control solutions.
Pinout
The IRF7201TRPBF is a dual N-channel MOSFET housed in an SO-8 package. It has a total of 8 pins. Here is a concise description of its pin functions:
1. Pins 1 and 8: These are the Drain (D1 and D2) connections for the first and second MOSFET, respectively.
2. Pins 2 and 7: These are the Source (S1 and S2) connections for the first and second MOSFET, respectively.
3. Pins 3 and 6: These are the Gate (G1 and G2) connections for the first and second MOSFET, respectively.
4. Pins 4 and 5: These are usually connected internally to the Source of the first and second MOSFETs, serving as a thermal and electrical linkage.
The IRF7201 is used in various applications requiring efficient power management, offering features like low on-resistance and fast switching, which are typically beneficial in DC-DC converters and load switch applications.
1. Pins 1 and 8: These are the Drain (D1 and D2) connections for the first and second MOSFET, respectively.
2. Pins 2 and 7: These are the Source (S1 and S2) connections for the first and second MOSFET, respectively.
3. Pins 3 and 6: These are the Gate (G1 and G2) connections for the first and second MOSFET, respectively.
4. Pins 4 and 5: These are usually connected internally to the Source of the first and second MOSFETs, serving as a thermal and electrical linkage.
The IRF7201 is used in various applications requiring efficient power management, offering features like low on-resistance and fast switching, which are typically beneficial in DC-DC converters and load switch applications.
Manufacturer
The IRF7201TRPBF is manufactured by Infineon Technologies. Infineon is a leading global semiconductor company that designs, manufactures, and supplies a broad range of semiconductor products. The company focuses on automotive, industrial power control, power management and multimarket, and digital security solutions. Infineon is known for its innovation in power electronics and semiconductor technologies, offering solutions that drive energy efficiency, mobility, and security in electronic devices.
Application
The IRF7201TRPBF is a dual N-channel MOSFET commonly used in various applications due to its efficiency and compact size. Key application areas include:
1. Power Management: Used in DC-DC converters and switching regulators for efficient power conversion.
2. Automotive: Ideal for electronic control units and motor drives due to its robustness.
3. Consumer Electronics: Employed in power supplies for devices like TVs and computers.
4. Industrial Equipment: Utilized in motor controls and power inverters for machinery.
5. Telecommunications: Supports power amplification and signal processing in communication devices.
Its low on-resistance and fast switching make it suitable for applications requiring efficient power handling.
1. Power Management: Used in DC-DC converters and switching regulators for efficient power conversion.
2. Automotive: Ideal for electronic control units and motor drives due to its robustness.
3. Consumer Electronics: Employed in power supplies for devices like TVs and computers.
4. Industrial Equipment: Utilized in motor controls and power inverters for machinery.
5. Telecommunications: Supports power amplification and signal processing in communication devices.
Its low on-resistance and fast switching make it suitable for applications requiring efficient power handling.
Package
The IRF7201TRPBF is a MOSFET packaged in a SOIC-8 (Small Outline Integrated Circuit) package. This type of package is compact, surface-mountable, and commonly used for electronic components that require efficient heat dissipation in a small form factor.
