IRF7240TRPBF vs IRF7201TRPBF Comparison
This in-depth comparison of the IRF7201TRPBF and IRF7240TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SOIC-8
Description
MOSFET N-CH 30V 7.3A 8SO
MOSFET P-CH 40V 10.5A 8SO
Series
HEXFET®
HEXFET®
Part Status
Obsolete
Active
Base Product Number
IRF7201
-
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
40 V
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
30mOhm @ 7.3A, 10V
-
Vgs(th) (Max) @ Id
1V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
-
Power Dissipation (Max)
2.5W (Tc)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
Current - Continuous Drain(Id) @ 25°C
-
10.5A (Ta)
Drive Voltage(Max Rds On Min Rds On)
-
4.5V, 10V
Rds On(Max) @ Id Vgs
-
15mOhm @ 10.5A, 10V
Vgs(th)(Max) @ Id
-
3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
-
110 nC @ 10 V
Vgs(Max)
-
±20V
Input Capacitance(Ciss)(Max) @ Vds
-
9250 pF @ 25 V
