IRF7309TRPBF vs IRF7317TRPBF

This in-depth comparison of the IRF7309TRPBF and IRF7317TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7309TRPBF

Infineon Technologies

Lifecycle
Active
Stock
5390 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
Part B

IRF7317TRPBF

Infineon Technologies

Lifecycle
Active
Stock
2170 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF7309TRPBF IRF7317TRPBF
Series HEXFET® HEXFET®
Part Status Active Active
FET Type N and P-Channel N and P-Channel
FET Feature Standard Logic Level Gate
Drain to Source Voltage (Vdss) 30V 20V
Current - Continuous Drain(Id) @ 25°C 4A, 3A 6.6A, 5.3A
Rds On(Max) @ Id Vgs 50mOhm @ 2.4A, 10V 29mOhm @ 6A, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA 700mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs 25nC @ 4.5V 27nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 520pF @ 15V 900pF @ 15V
Power - Max 1.4W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount