IRF7317TRPBF vs IRF7319PBF Comparison

This in-depth comparison of the IRF7317TRPBF and IRF7319PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRF7317TRPBF

+BOM

2170 PCS | Infineon Technologies
IRF7319PBF

+BOM

5795 PCS | Infineon Technologies
Package SOIC-8 SOIC-8
Description MOSFET N/P-CH 20V 8-SOIC MOSFET N/P-CH 30V 8SOIC
Supplier - Infineon Technologies,Rochester Electronics, LLC
Series HEXFET® HEXFET®
Part Status Active Discontinued at Digi-Key
FET Type N and P-Channel N and P-Channel
FET Feature Logic Level Gate Standard
Drain to Source Voltage (Vdss) 20V 30V
Rds On(Max) @ Id Vgs 29mOhm @ 6A, 4.5V 29mOhm @ 5.8A, 10V
Vgs(th)(Max) @ Id 700mV @ 250µA 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 27nC @ 4.5V 33nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 900pF @ 15V 650pF @ 25V
Power - Max 2W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Current - Continuous Drain(Id) @ 25°C 6.6A, 5.3A -
Comparison Model : IRF7317TRPBF IRF7319PBF

+BOM RFQ