IRF7389TRPBF vs IRF7341GTRPBF

This in-depth comparison of the IRF7389TRPBF and IRF7341GTRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7389TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 2749 PCS
Package: SO-8
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

Part B

IRF7341GTRPBF

Infineon Technologies

Lifecycle: Active
Stock: 3946 PCS
Package: SO-8
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF7389TRPBF	IRF7341GTRPBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N and P-Channel	2 N-Channel (Dual)
FET Feature	Logic Level Gate	Standard
Drain to Source Voltage (Vdss)	30V	55V
Rds On(Max) @ Id Vgs	29mOhm @ 5.8A, 10V	50mOhm @ 5.1A, 10V
Vgs(th)(Max) @ Id	1V @ 250µA	1V @ 250µA (Min)
Gate Charge(Qg)(Max) @ Vgs	33nC @ 10V	44nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds	650pF @ 25V	780pF @ 25V
Power - Max	2.5W	2.4W
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Current - Continuous Drain(Id) @ 25°C	-	5.1A

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