IRF7341PBF vs IRF7379QTRPBF

This in-depth comparison of the IRF7341PBF and IRF7379QTRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7341PBF

Infineon Technologies

Lifecycle
Active
Stock
4680 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ
Part B

IRF7379QTRPBF

Infineon Technologies

Lifecycle
Active
Stock
8064 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF7341PBF IRF7379QTRPBF
Supplier Rochester Electronics, LLC,Infineon Technologies Infineon Technologies
Part Status Discontinued at Digi-Key Obsolete
FET Type 2 N-Channel (Dual) N and P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 55V 30V
Current - Continuous Drain(Id) @ 25°C 4.7A 5.8A, 4.3A
Rds On(Max) @ Id Vgs 50mOhm @ 4.7A, 10V 45mOhm @ 5.8A, 10V
Vgs(th)(Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 36nC @ 10V 25nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 740pF @ 25V 520pF @ 25V
Power - Max 2W 2.5W
Mounting Type Surface Mount Surface Mount
Series HEXFET® -
Operating Temperature -55°C ~ 150°C (TJ) -
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