IRF7341PBF vs IRF7301PBF

This in-depth comparison of the IRF7341PBF and IRF7301PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRF7341PBF

+BOM

4680 PCS | Infineon Technologies
IRF7301PBF

+BOM

7366 PCS | Infineon Technologies
Package SOIC-8 SOIC-8
Description MOSFET 2N-CH 55V 4.7A 8-SOIC MOSFET 2N-CH 20V 5.2A 8-SOIC
Supplier Rochester Electronics, LLC,Infineon Technologies Infineon Technologies,Rochester Electronics, LLC
Series HEXFET® HEXFET®
ProductStatus Discontinued at Digi-Key Discontinued at Digi-Key
FETType 2 N-Channel (Dual) 2 N-Channel (Dual)
FETFeature Logic Level Gate Logic Level Gate
DraintoSourceVoltage(Vdss) 55V 20V
Current-ContinuousDrain(Id)@25°C 4.7A 5.2A
RdsOn(Max)@IdVgs 50mOhm @ 4.7A, 10V 50mOhm @ 2.6A, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA 700mV @ 250µA
GateCharge(Qg)(Max)@Vgs 36nC @ 10V 20nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 740pF @ 25V 660pF @ 15V
Power-Max 2W 2W
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount
Comparison Model : IRF7341PBF IRF7301PBF

+BOM RFQ