IRF7410TRPBF vs IRF7413ZTRPBF

This in-depth comparison of the IRF7410TRPBF and IRF7413ZTRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7410TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 2629 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRF7413ZTRPBF

Infineon Technologies

Lifecycle: Active
Stock: 2446 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF7410TRPBF	IRF7413ZTRPBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	P-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V	30 V
Current - Continuous Drain(Id) @ 25°C	16A (Ta)	13A (Ta)
Drive Voltage(Max Rds On Min Rds On)	1.8V, 4.5V	4.5V, 10V
Rds On(Max) @ Id Vgs	7mOhm @ 16A, 4.5V	10mOhm @ 13A, 10V
Vgs(th)(Max) @ Id	900mV @ 250µA	2.25V @ 25µA
Gate Charge(Qg)(Max) @ Vgs	91 nC @ 4.5 V	14 nC @ 4.5 V
Vgs(Max)	±8V	±20V
Input Capacitance(Ciss)(Max) @ Vds	8676 pF @ 10 V	1210 pF @ 15 V
Power Dissipation (Max)	2.5W (Ta)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

Compare RFQ