IRF9310TRPBF vs IRF9389TRPBF

This in-depth comparison of the IRF9310TRPBF and IRF9389TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF9310TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 3929 PCS
Series: Transistors - FETs, MOSFETs - Single FETs, MOSFETs

+BOM RFQ

Part B

IRF9389TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 2112 PCS
Package: SO-8
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF9310TRPBF	IRF9389TRPBF
Series	HEXFET®	HEXFET®
Part Status	Obsolete	Active
Base Product Number	IRF9310	-
FET Type	P-Channel	N and P-Channel
Technology	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	30 V	30V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	-
Rds On (Max) @ Id, Vgs	4.6mOhm @ 20A, 10V	-
Vgs(th) (Max) @ Id	2.4V @ 100µA	-
Gate Charge (Qg) (Max) @ Vgs	165 nC @ 10 V	-
Vgs (Max)	±20V	-
Input Capacitance (Ciss) (Max) @ Vds	5250 pF @ 15 V	-
Power Dissipation (Max)	2.5W (Ta)	-
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Packaging	Cut Tape (CT), Tape & Reel (TR)	-
FET Feature	-	Logic Level Gate
Current - Continuous Drain(Id) @ 25°C	-	6.8A, 4.6A
Rds On(Max) @ Id Vgs	-	27mOhm @ 6.8A, 10V
Vgs(th)(Max) @ Id	-	2.3V @ 10µA
Gate Charge(Qg)(Max) @ Vgs	-	14nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds	-	398pF @ 15V
Power - Max	-	2W

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