IRF9310TRPBF vs IRF9388TRPBF Comparison
This in-depth comparison of the IRF9310TRPBF and IRF9388TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SO-8
Description
MOSFET P-CH 30V 20A 8SO
MOSFET P-CH 30V 12A 8SO
Series
HEXFET®
HEXFET®
Part Status
Obsolete
Active
FET Type
P-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
30 V
Current - Continuous Drain(Id) @ 25°C
-
12A (Ta)
Drive Voltage(Max Rds On Min Rds On)
-
10V, 20V
Rds On(Max) @ Id Vgs
-
8.5mOhm @ 12A, 20V
Vgs(th)(Max) @ Id
-
2.4V @ 25µA
Gate Charge(Qg)(Max) @ Vgs
-
52 nC @ 10 V
Vgs(Max)
-
±25V
Input Capacitance(Ciss)(Max) @ Vds
-
1680 pF @ 25 V
Power Dissipation (Max)
2.5W (Ta)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Base Product Number
IRF9310
-
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
4.6mOhm @ 20A, 10V
-
Vgs(th) (Max) @ Id
2.4V @ 100µA
-
Gate Charge (Qg) (Max) @ Vgs
165 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
5250 pF @ 15 V
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
