IRF9358TRPBF vs IRF9310TRPBF Comparison
This in-depth comparison of the IRF9310TRPBF and IRF9358TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SO-8
Description
MOSFET P-CH 30V 20A 8SO
MOSFET 2P-CH 30V 9.2A 8SOIC
Series
HEXFET®
HEXFET®
Part Status
Obsolete
Active
Base Product Number
IRF9310
-
FET Type
P-Channel
2 P-Channel (Dual)
Technology
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss)
30 V
30V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
4.6mOhm @ 20A, 10V
-
Vgs(th) (Max) @ Id
2.4V @ 100µA
-
Gate Charge (Qg) (Max) @ Vgs
165 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
5250 pF @ 15 V
-
Power Dissipation (Max)
2.5W (Ta)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
FET Feature
-
Logic Level Gate
Current - Continuous Drain(Id) @ 25°C
-
9.2A
Rds On(Max) @ Id Vgs
-
16.3mOhm @ 9.2A, 10V
Vgs(th)(Max) @ Id
-
2.4V @ 25µA
Gate Charge(Qg)(Max) @ Vgs
-
38nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds
-
1740pF @ 25V
Power - Max
-
2W
