IRF9530NPBF vs IRF9530PBF
This in-depth comparison of the IRF9530PBF and IRF9530NPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
TO-220-3
TO-220-3
Description
MOSFET P-CH 100V 12A TO220AB
MOSFET P-CH 100V 14A TO220AB
ProductStatus
Active
Active
FETType
P-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)
100 V
100 V
Current-ContinuousDrain(Id)@25°C
12A (Tc)
14A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
10V
10V
RdsOn(Max)@IdVgs
300mOhm @ 7.2A, 10V
200mOhm @ 8.4A, 10V
Vgs(th)(Max)@Id
4V @ 250µA
4V @ 250µA
GateCharge(Qg)(Max)@Vgs
38 nC @ 10 V
58 nC @ 10 V
Vgs(Max)
±20V
±20V
InputCapacitance(Ciss)(Max)@Vds
860 pF @ 25 V
760 pF @ 25 V
PowerDissipation(Max)
88W (Tc)
79W (Tc)
OperatingTemperature
-55°C ~ 175°C (TJ)
-55°C ~ 175°C (TJ)
MountingType
Through Hole
Through Hole
Series
-
HEXFET®
