IRF9530NPBF vs IRF9540NPBF

This in-depth comparison of the IRF9540NPBF and IRF9530NPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRF9540NPBF

+BOM

6653 PCS | Infineon Technologies
IRF9530NPBF

+BOM

5248 PCS | Infineon Technologies
Package TO-220-3 TO-220-3
Description MOSFET P-CH 100V 23A TO220AB MOSFET P-CH 100V 14A TO220AB
Series HEXFET® HEXFET®
ProductStatus Active Active
FETType P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V 100 V
Current-ContinuousDrain(Id)@25°C 23A (Tc) 14A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 117mOhm @ 11A, 10V 200mOhm @ 8.4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 97 nC @ 10 V 58 nC @ 10 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 1300 pF @ 25 V 760 pF @ 25 V
PowerDissipation(Max) 140W (Tc) 79W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole
Comparison Model : IRF9540NPBF IRF9530NPBF

+BOM RFQ