IRFB3607PBF vs IRFB3077PBF

This in-depth comparison of the IRFB3607PBF and IRFB3077PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFB3607PBF

International Rectifier

Lifecycle
Active
Stock
3175 PCS
Package
TO-220
Series
Specialized ICs
Part B

IRFB3077PBF

International Rectifier

Lifecycle
Active
Stock
4658 PCS
Package
TO-220
Series
Transistors - FETs, MOSFETs - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFB3607PBF IRFB3077PBF
Part Status Active Active
Series - HEXFET®
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 75 V
Current - Continuous Drain(Id) @ 25°C - 120A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 10V
Rds On(Max) @ Id Vgs - 3.3mOhm @ 75A, 10V
Vgs(th)(Max) @ Id - 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 220 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 9400 pF @ 50 V
Power Dissipation (Max) - 370W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type - Through Hole