IRFB3206PBF vs IRFB3607PBF

This in-depth comparison of the IRFB3607PBF and IRFB3206PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB3607PBF

+BOM

3175 PCS | International Rectifier
IRFB3206PBF

+BOM

6622 PCS | Infineon Technologies
Package TO-220 TO-220-3
Description IRFB3607 - 12V-300V N-CHANNEL PO MOSFET N-CH 60V 120A TO220AB
ProductStatus Active Active
Series - HEXFET®
FETType - N-Channel
Technology - MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) - 60 V
Current-ContinuousDrain(Id)@25°C - 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) - 10V
RdsOn(Max)@IdVgs - 3mOhm @ 75A, 10V
Vgs(th)(Max)@Id - 4V @ 150µA
GateCharge(Qg)(Max)@Vgs - 170 nC @ 10 V
Vgs(Max) - ±20V
InputCapacitance(Ciss)(Max)@Vds - 6540 pF @ 50 V
PowerDissipation(Max) - 300W (Tc)
OperatingTemperature - -55°C ~ 175°C (TJ)
MountingType - Through Hole
Comparison Model : IRFB3607PBF IRFB3206PBF

+BOM RFQ