IRFB3207PBF vs IRFB3307ZPBF

This in-depth comparison of the IRFB3207PBF and IRFB3307ZPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFB3207PBF

Infineon Technologies

Lifecycle
Active
Stock
2526 PCS
Package
TO-220-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

IRFB3307ZPBF

International Rectifier

Lifecycle
Active
Stock
2255 PCS
Package
TO-220AB
Series
Specialized ICs
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFB3207PBF IRFB3307ZPBF
Series HEXFET® -
Part Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 75 V -
Current - Continuous Drain(Id) @ 25°C 170A (Tc) -
Drive Voltage(Max Rds On Min Rds On) 10V -
Rds On(Max) @ Id Vgs 4.5mOhm @ 75A, 10V -
Vgs(th)(Max) @ Id 4V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 260 nC @ 10 V -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 7600 pF @ 50 V -
Power Dissipation (Max) 330W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole -
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