IRFB3207ZPBF vs IRFB3806PBF

This in-depth comparison of the IRFB3207ZPBF and IRFB3806PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFB3207ZPBF

International Rectifier

Lifecycle: Active
Stock: 2271 PCS
Package: TO-220
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRFB3806PBF

Infineon Technologies

Lifecycle: Active
Stock: 5920 PCS
Package: TO-220-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRFB3207ZPBF	IRFB3806PBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V	60 V
Current - Continuous Drain(Id) @ 25°C	120A (Tc)	43A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	4.1mOhm @ 75A, 10V	15.8mOhm @ 25A, 10V
Vgs(th)(Max) @ Id	4V @ 150µA	4V @ 50µA
Gate Charge(Qg)(Max) @ Vgs	170 nC @ 10 V	30 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	6920 pF @ 50 V	1150 pF @ 50 V
Power Dissipation (Max)	300W (Tc)	71W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole

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