IRFB3306PBF vs IRFB3207ZPBF

This in-depth comparison of the IRFB3207ZPBF and IRFB3306PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB3207ZPBF

+BOM

2271 PCS | International Rectifier
IRFB3306PBF

+BOM

3253 PCS | Infineon Technologies
Package TO-220 TO-220-3
Description IRFB3207 - 12V-300V N-CHANNEL PO MOSFET N-CH 60V 120A TO220AB
Series HEXFET® HEXFET®
ProductStatus Active Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V 60 V
Current-ContinuousDrain(Id)@25°C 120A (Tc) 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 4.1mOhm @ 75A, 10V 4.2mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 150µA 4V @ 150µA
GateCharge(Qg)(Max)@Vgs 170 nC @ 10 V 120 nC @ 10 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 6920 pF @ 50 V 4520 pF @ 50 V
PowerDissipation(Max) 300W (Tc) 230W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole
Comparison Model : IRFB3207ZPBF IRFB3306PBF

+BOM RFQ