IRFB3206PBF vs IRFB3207ZPBF Comparison

This in-depth comparison of the IRFB3207ZPBF and IRFB3206PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB3207ZPBF

+BOM

2271 PCS | International Rectifier
IRFB3206PBF

+BOM

6622 PCS | Infineon Technologies
Package TO-220 TO-220-3
Description IRFB3207 - 12V-300V N-CHANNEL PO MOSFET N-CH 60V 120A TO220AB
Series HEXFET® HEXFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 60 V
Current - Continuous Drain(Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 4.1mOhm @ 75A, 10V 3mOhm @ 75A, 10V
Vgs(th)(Max) @ Id 4V @ 150µA 4V @ 150µA
Gate Charge(Qg)(Max) @ Vgs 170 nC @ 10 V 170 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 6920 pF @ 50 V 6540 pF @ 50 V
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Comparison Model : IRFB3207ZPBF IRFB3206PBF

+BOM RFQ