IRFB4115PBF vs IRFB4019PBF

This in-depth comparison of the IRFB4115PBF and IRFB4019PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IRFB4115PBF

Infineon Technologies

Lifecycle
Active
Stock
3757 PCS
Package
TO-220
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

IRFB4019PBF

International Rectifier

Lifecycle
Active
Stock
6417 PCS
Package
TO-220-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFB4115PBF IRFB4019PBF
Series HEXFET® -
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain(Id) @ 25°C 104A (Tc) 17A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 11mOhm @ 62A, 10V 95mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA 4.9V @ 50µA
Gate Charge(Qg)(Max) @ Vgs 120 nC @ 10 V 20 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 5270 pF @ 50 V 800 pF @ 50 V
Power Dissipation (Max) 380W (Tc) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
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