IRFB4020PBF vs IRFB4115PBF

This in-depth comparison of the IRFB4115PBF and IRFB4020PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB4115PBF

+BOM

3757 PCS | Infineon Technologies
IRFB4020PBF

+BOM

1864 PCS | Infineon Technologies
Package TO-220 TO-220
Description MOSFET N-CH 150V 104A TO220AB MOSFET N-CH 200V 18A TO220AB
Series HEXFET® -
ProductStatus Active Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V 200 V
Current-ContinuousDrain(Id)@25°C 104A (Tc) 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 11mOhm @ 62A, 10V 100mOhm @ 11A, 10V
Vgs(th)(Max)@Id 5V @ 250µA 4.9V @ 100µA
GateCharge(Qg)(Max)@Vgs 120 nC @ 10 V 29 nC @ 10 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 5270 pF @ 50 V 1200 pF @ 50 V
PowerDissipation(Max) 380W (Tc) 100W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole
Comparison Model : IRFB4115PBF IRFB4020PBF

+BOM RFQ