IRFB4019PBF

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IRFB4019PBF

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IRFB4019 - 12V-300V N-CHANNEL PO

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Specifications

Attribute Value
Package Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 17A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 95mOhm @ 10A, 10V
Vgs(th)(Max)@Id 4.9V @ 50µA
GateCharge(Qg)(Max)@Vgs 20 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 800 pF @ 50 V
PowerDissipation(Max) 80W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Overview

Description

The IRFB4019PBF is an N-channel HEXFET Power MOSFET from Infineon, designed for high-power applications. Key features include:
- Voltage Rating: 150V
- Current Rating: 180A (pulsed) / 75A (continuous)
- Low On-Resistance (RDS(on)): 4.5mΩ (max) @ 10V VGS
- Fast Switching: Suitable for high-frequency applications
- Robust Design: Avalanche energy rated for reliability
Commonly used in:
- DC-DC converters
- Motor drives
- Power supplies
- Inverters
Packaged in a TO-220AB for easy mounting, it offers efficient thermal performance. Its low gate charge (110nC) ensures minimal switching losses.
A reliable choice for high-current, high-voltage switching needs.

Equivalent

Equivalent products to the IRFB4019PBF (100V, 170A, N-channel MOSFET) include:
- IRFB4110PBF (100V, 180A)
- IRFB4127PBF (75V, 180A)
- IRFB4410PBF (100V, 96A)
- STP160N10F7 (100V, 160A)
- AUIRFB4019 (same specs, alternate manufacturer)
Check datasheets for exact compatibility in your application.

Features

The IRFB4019PBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 150V
- Current Rating: 84A (continuous)
- Low On-Resistance (RDS(on)): 19mΩ (max at VGS = 10V)
- Fast Switching: Suitable for high-frequency applications
- Avalanche Energy Rated: Enhanced ruggedness
- TO-220 Package: Easy mounting and heat dissipation
- Logic-Level Gate Drive: Compatible with 5V drive (partially enhanced at 4.5V)
- Low Gate Charge (Qg): 63nC (typical) for efficient switching
Ideal for power supplies, motor control, and DC-DC converters.

Pinout

The IRFB4019PBF is a TO-220AB packaged N-channel MOSFET with 3 pins:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high current terminal).
3. Source (S): Ground/reference terminal.
Key Features:
- 100V drain-source voltage (VDS).
- 75A continuous drain current (ID).
- Low on-resistance (8.5mΩ max at 10V VGS).
- Fast switching for power applications.
Commonly used in DC-DC converters, motor drives, and power switching circuits.

Application

The IRFB4019PBF, a high-power N-channel MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient power conversion in SMPS and DC-DC converters.
2. Motor Control – Drives motors in industrial, automotive, and robotics applications.
3. Inverters – Used in solar inverters and UPS systems for energy conversion.
4. Audio Amplifiers – High-current switching in Class D amplifiers.
5. Automotive Systems – Electric vehicle (EV) power management and battery systems.
Its low on-resistance (RDS(on)) and high current handling (195A) make it ideal for high-efficiency, high-power applications.

Package

The IRFB4019PBF is a Power MOSFET housed in a TO-220AB package. This through-hole package is widely used for power applications due to its robust thermal performance and ease of mounting on heat sinks. The TO-220AB type provides reliable electrical isolation and mechanical stability, making it suitable for high-power switching and amplification circuits.

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