IRFP3206PBF vs IRFP360PBF

This in-depth comparison of the IRFP360PBF and IRFP3206PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFP360PBF

+BOM

3678 PCS | Vishay Siliconix
IRFP3206PBF

+BOM

1748 PCS | Infineon Technologies
Package TO-247-3 TO-247-3
Description MOSFET N-CH 400V 23A TO247-3 MOSFET N-CH 60V 120A TO247AC
ProductStatus Active Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 400 V 60 V
Current-ContinuousDrain(Id)@25°C 23A (Tc) 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 200mOhm @ 14A, 10V 3mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 150µA
GateCharge(Qg)(Max)@Vgs 210 nC @ 10 V 170 nC @ 10 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 4500 pF @ 25 V 6540 pF @ 50 V
PowerDissipation(Max) 280W (Tc) 280W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole
Series - HEXFET®
Comparison Model : IRFP360PBF IRFP3206PBF

+BOM RFQ