IRFP3206PBF vs IRFP3710PBF Comparison

This in-depth comparison of the IRFP3710PBF and IRFP3206PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFP3710PBF

+BOM

3244 PCS | Infineon Technologies
IRFP3206PBF

+BOM

1748 PCS | Infineon Technologies
Package TO-247-3 TO-247-3
Description MOSFET N-CH 100V 57A TO247AC MOSFET N-CH 60V 120A TO247AC
Series HEXFET® HEXFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 60 V
Current - Continuous Drain(Id) @ 25°C 57A (Tc) 120A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 25mOhm @ 28A, 10V 3mOhm @ 75A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA 4V @ 150µA
Gate Charge(Qg)(Max) @ Vgs 190 nC @ 10 V 170 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 3000 pF @ 25 V 6540 pF @ 50 V
Power Dissipation (Max) 200W (Tc) 280W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Comparison Model : IRFP3710PBF IRFP3206PBF

+BOM RFQ