IRFP4227PBF vs IRFP460APBF

This in-depth comparison of the IRFP4227PBF and IRFP460APBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFP4227PBF

+BOM

2165 PCS | International Rectifier
IRFP460APBF

+BOM

3680 PCS | Vishay Siliconix
Package TO-247 TO-247-3
Description IRFP4227 - 12V-300V N-CHANNEL PO MOSFET N-CH 500V 20A TO247-3
ProductStatus Active Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V 500 V
Current-ContinuousDrain(Id)@25°C 65A (Tc) 20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 25mOhm @ 46A, 10V 270mOhm @ 12A, 10V
Vgs(th)(Max)@Id 5V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 98 nC @ 10 V 105 nC @ 10 V
Vgs(Max) ±30V ±30V
InputCapacitance(Ciss)(Max)@Vds 4600 pF @ 25 V 3100 pF @ 25 V
PowerDissipation(Max) 330W (Tc) 280W (Tc)
OperatingTemperature -40°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole
Series HEXFET® -
Comparison Model : IRFP4227PBF IRFP460APBF

+BOM RFQ