IRFP4768PBF vs IRFP460

This in-depth comparison of the IRFP4768PBF and IRFP460 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFP4768PBF

Infineon Technologies

Lifecycle
Active
Stock
7193 PCS
Series
Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Part B

IRFP460

STMicroelectronics

Lifecycle
Active
Stock
6198 PCS
Package
TO-247-3
Series
Transistors - FETs, MOSFETs - Single

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFP4768PBF IRFP460
Series HEXFET® PowerMESH™ II
Part Status Last Time Buy Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 500 V
Current - Continuous Drain(Id) @ 25°C - 18.4A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 10V
Rds On(Max) @ Id Vgs - 270mOhm @ 9A, 10V
Vgs(th)(Max) @ Id - 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 128 nC @ 10 V
Vgs(Max) - ±30V
Input Capacitance(Ciss)(Max) @ Vds - 2980 pF @ 25 V
Power Dissipation (Max) 520W (Tc) 220W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Base Product Number IRFP4768 -
Current - Continuous Drain (Id) @ 25°C 93A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 17.5mOhm @ 56A, 10V -
Vgs(th) (Max) @ Id 5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 10880 pF @ 50 V -
Packaging Tube -