MC33171DR2G vs MC33151DR2

This in-depth comparison of the MC33171DR2G and MC33151DR2 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
MC33171DR2G

+BOM

2683 PCS | onsemi
MC33151DR2

+BOM

8694 PCS | onsemi
Package SOIC-8 SOIC-8
Description IC OPAMP GP 1 CIRCUIT 8SOIC IC GATE DRVR LOW-SIDE 8SOIC
ProductStatus Active Obsolete
DrivenConfiguration - Low-Side
ChannelType - Independent
NumberofDrivers - 2
GateType - N-Channel MOSFET
Voltage-Supply - 6.5V ~ 18V
LogicVoltage-VILVIH - 0.8V, 2.6V
Current-PeakOutput(SourceSink) - 1.5A, 1.5A
InputType - Inverting
Rise/FallTime(Typ) - 31ns, 32ns
OperatingTemperature -40°C ~ 85°C -40°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount
AmplifierType General Purpose -
NumberofCircuits 1 -
SlewRate 2.1V/µs -
GainBandwidthProduct 1.8 MHz -
Current-InputBias 20 nA -
Voltage-InputOffset 2 mV -
Current-Supply 220µA -
Current-Output/Channel 27 mA -
Voltage-SupplySpan(Min) 3 V -
Voltage-SupplySpan(Max) 44 V -
Comparison Model : MC33171DR2G MC33151DR2

+BOM RFQ