MC33171DR2G vs MC33153DR2G

This in-depth comparison of the MC33171DR2G and MC33153DR2G provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MC33171DR2G

onsemi

Lifecycle: Active
Stock: 2683 PCS
Package: SOIC-8
Series: Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps

+BOM RFQ

Part B

MC33153DR2G

onsemi

Lifecycle: Active
Stock: 3220 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	MC33171DR2G	MC33153DR2G
Part Status	Active	Active
Driven Configuration	-	Low-Side
Channel Type	-	Single
Number of Drivers	-	1
Gate Type	-	IGBT, N-Channel MOSFET
Voltage - Supply	-	11V ~ 20V
Logic Voltage - VILVIH	-	1.2V, 3.2V
Current - Peak Output(Source Sink)	-	1A, 2A
Input Type	-	Inverting
Rise / Fall Time(Typ)	-	17ns, 17ns
Operating Temperature	-40°C ~ 85°C	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Amplifier Type	General Purpose	-
Number of Circuits	1	-
Slew Rate	2.1V/µs	-
Gain Bandwidth Product	1.8 MHz	-
Current - Input Bias	20 nA	-
Voltage - Input Offset	2 mV	-
Supply Current	220µA	-
Current - Output / Channel	27 mA	-
Voltage - Supply Span(Min)	3 V	-
Voltage - Supply Span(Max)	44 V	-

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