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CSD88539ND
+BOMMOSFET 2N-CH 60V 15A 8SOIC
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ManufacturerTexas Instruments
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Mfr. Part #CSD88539ND
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Package SOIC (D)-8
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In Stock4432
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 15A |
| RdsOn(Max)@IdVgs | 28mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 3.6V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 9.4nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 741pF @ 30V |
| Power-Max | 2.1W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Overview
Description
The CSD88539ND is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Texas Instruments, designed for efficient power management applications. It features low on-resistance, which minimizes power loss and enhances efficiency, making it suitable for high-frequency switching applications. This MOSFET is housed in a compact package, often a PowerPAK® SO-8, which offers thermal advantages and saves board space.
Key specifications include a low gate charge, enabling fast switching speeds, and a robust design that can handle high current loads. The CSD88539ND is commonly used in synchronous buck converters, motor drives, and other power conversion systems. It operates across a wide range of voltages and is designed to meet the demands of modern electronic devices that require reliable and efficient power delivery.
Overall, the CSD88539ND is valued for its performance, compactness, and suitability in various high-efficiency power applications, making it a popular choice for engineers and designers in the electronics industry.
Key specifications include a low gate charge, enabling fast switching speeds, and a robust design that can handle high current loads. The CSD88539ND is commonly used in synchronous buck converters, motor drives, and other power conversion systems. It operates across a wide range of voltages and is designed to meet the demands of modern electronic devices that require reliable and efficient power delivery.
Overall, the CSD88539ND is valued for its performance, compactness, and suitability in various high-efficiency power applications, making it a popular choice for engineers and designers in the electronics industry.
Equivalent
The CSD88539ND is a dual N-channel MOSFET from Texas Instruments. Equivalent products might include:
1. Infineon's BSC093N04LS – Offers similar specifications for voltage and current.
2. ON Semiconductor's NVMFD5C466NL – Another dual N-channel MOSFET with comparable ratings.
3. Vishay's SiR662DP – Provides similar performance characteristics.
Ensure to verify the specific parameters such as Rds(on), Vgs, and package type to ensure compatibility with your application.
1. Infineon's BSC093N04LS – Offers similar specifications for voltage and current.
2. ON Semiconductor's NVMFD5C466NL – Another dual N-channel MOSFET with comparable ratings.
3. Vishay's SiR662DP – Provides similar performance characteristics.
Ensure to verify the specific parameters such as Rds(on), Vgs, and package type to ensure compatibility with your application.
Features
The CSD88539ND is a dual N-channel NexFET power MOSFET from Texas Instruments. It is designed for high-efficiency power applications. Key features include:
1. Voltage Rating: The device has a drain-source voltage (V_DS) rating of 40V, making it suitable for various power conversion applications.
2. Current Capability: It supports a continuous drain current (I_D) of up to 20A per channel, facilitating high-current operations.
3. Low On-Resistance: The CSD88539ND offers low R_DS(on) values, significantly reducing power loss and improving efficiency, especially in switching applications.
4. High-Speed Switching: It supports fast switching speeds, contributing to better performance in high-frequency applications.
5. Thermal Performance: The device is designed with optimized thermal characteristics to handle high power loads efficiently.
6. Compact Package: It comes in a SON 5mm × 6mm package, allowing space-saving designs and easy integration into compact systems.
7. Applications: Common applications include DC-DC converters, power management, motor drives, and load switching.
These features make the CSD88539ND suitable for robust and efficient power management in a variety of electronic devices.
1. Voltage Rating: The device has a drain-source voltage (V_DS) rating of 40V, making it suitable for various power conversion applications.
2. Current Capability: It supports a continuous drain current (I_D) of up to 20A per channel, facilitating high-current operations.
3. Low On-Resistance: The CSD88539ND offers low R_DS(on) values, significantly reducing power loss and improving efficiency, especially in switching applications.
4. High-Speed Switching: It supports fast switching speeds, contributing to better performance in high-frequency applications.
5. Thermal Performance: The device is designed with optimized thermal characteristics to handle high power loads efficiently.
6. Compact Package: It comes in a SON 5mm × 6mm package, allowing space-saving designs and easy integration into compact systems.
7. Applications: Common applications include DC-DC converters, power management, motor drives, and load switching.
These features make the CSD88539ND suitable for robust and efficient power management in a variety of electronic devices.
Pinout
The CSD88539ND is a dual N-channel NexFET power MOSFET from Texas Instruments, designed for optimized power management solutions. It comes in a compact package with a pin configuration that supports high-efficiency performance.
Pin Count:
The CSD88539ND features an 8-pin configuration.
Pin Functions:
1. Gate (G): Controls the operation of the MOSFET by receiving a voltage signal that turns the device on or off.
2. Source (S): Connects to the source of the MOSFET, typically tied to the ground in many applications.
3. Drain (D): Connects to the load in a circuit, allowing current to flow through when the MOSFET is on.
The exact pin layout may vary depending on the package type and the specific design of the circuit board. Always refer to the datasheet for precise pin assignments and detailed electrical characteristics.
Pin Count:
The CSD88539ND features an 8-pin configuration.
Pin Functions:
1. Gate (G): Controls the operation of the MOSFET by receiving a voltage signal that turns the device on or off.
2. Source (S): Connects to the source of the MOSFET, typically tied to the ground in many applications.
3. Drain (D): Connects to the load in a circuit, allowing current to flow through when the MOSFET is on.
The exact pin layout may vary depending on the package type and the specific design of the circuit board. Always refer to the datasheet for precise pin assignments and detailed electrical characteristics.
Manufacturer
The CSD88539ND is manufactured by Texas Instruments. Texas Instruments, commonly known as TI, is an American technology company headquartered in Dallas, Texas. It is one of the largest semiconductor companies globally and is known for designing and manufacturing a wide range of electronic products and components. TI specializes in the development of analog chips and embedded processors, which are used in various applications, including industrial, automotive, personal electronics, and communications equipment. The company also provides technologies for power management, data converters, and amplifiers, among others. Texas Instruments is recognized for its innovation and contributions to the electronics and semiconductor industries.
Application
The CSD88539ND is a power MOSFET commonly used in applications requiring efficient power management and switching. Key application areas include:
1. DC-DC Converters: Used in synchronous rectification to improve efficiency.
2. Motor Drives: Suitable for controlling small motors in consumer electronics.
3. Battery Management Systems: Helps in efficient charging and discharging processes.
4. Telecommunications: Used in power supply units for telecom equipment.
5. Computing and Servers: Powers management circuits in computers and data centers.
6. Consumer Electronics: Integrated into power adapters and chargers for various devices.
Its compact size and efficient performance make it a versatile choice for modern electronic systems.
1. DC-DC Converters: Used in synchronous rectification to improve efficiency.
2. Motor Drives: Suitable for controlling small motors in consumer electronics.
3. Battery Management Systems: Helps in efficient charging and discharging processes.
4. Telecommunications: Used in power supply units for telecom equipment.
5. Computing and Servers: Powers management circuits in computers and data centers.
6. Consumer Electronics: Integrated into power adapters and chargers for various devices.
Its compact size and efficient performance make it a versatile choice for modern electronic systems.
Package
The CSD88539ND is a power transistor with a Dual Cool™ N-channel MOSFET configuration. It comes in a compact SON (Small Outline No-lead) package, which is designed to improve thermal performance and support efficient power management applications.
