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FDA50N50
+BOMMOSFET N-CH 500V 48A TO3PN
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Manufactureronsemi
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Mfr. Part #FDA50N50
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Datasheet FDA50N50 DataSheet
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In Stock3695
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Specifications
| Attribute | Value |
| Series | UniFET™ |
| Part Status | Obsolete |
| Base Product Number | FDA50 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 24A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6460 pF @ 25 V |
| Power Dissipation (Max) | 625W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
| Package | TO-3P-3, SC-65-3 |
| Packaging | Tube |
Overview
Description
- Low On-Resistance (RDS(on)): Enhances efficiency by minimizing power loss.
- High Current Handling: Supports up to 50A continuous drain current.
- Fast Switching: Suitable for DC-DC converters, motor drives, and power supplies.
- Robust Design: Built to withstand high voltage (50V) and harsh conditions.
Commonly used in automotive, industrial, and renewable energy systems, the FDA50N50 offers reliable performance in demanding environments. Always refer to the datasheet for detailed specifications and thermal management guidelines.
Equivalent
- IRFP250N (International Rectifier)
- STP80NF55-06 (STMicroelectronics)
- FDPF50N50 (Fairchild/ON Semiconductor)
- IXFH50N50 (IXYS)
These alternatives offer similar specs (500V, 50A) and are commonly used in high-power applications like inverters and motor drives. Always verify datasheet compatibility for your specific design.
Features
- High Voltage & Current Rating: 500V drain-source voltage (VDSS) and 50A continuous drain current (ID).
- Low On-Resistance: Typically 62mΩ (at VGS = 10V), reducing conduction losses.
- Fast Switching: Suitable for high-frequency applications like power supplies and motor drives.
- Avalanche Energy Rated: Enhances reliability in rugged conditions.
- TO-247 Package: Robust thermal performance for high-power dissipation.
- Low Gate Charge (Qg): Improves switching efficiency.
Ideal for switching power supplies, inverters, and industrial applications.
Pinout
1. Gate (G): Controls the switching operation (typically driven by 4V to 10V).
2. Drain (D): Handles the high-voltage/high-current load (rated for 500V, 50A).
3. Source (S): Connected to ground or return path.
Key Functions:
- High-voltage switching (e.g., power supplies, motor drives).
- Low on-resistance (~85mΩ) for efficient power handling.
The compact DPAK design suits space-constrained applications.
Package
Frequently Asked Questions
Q: What is the maximum drain-source voltage rating for the FDA50N50?
A: The FDA50N50 is rated for a maximum drain-source voltage (Vdss) of 500V, suitable for high-voltage applications.
Q: What is the typical on-resistance (Rds(on)) for this MOSFET at 24A?
A: The maximum on-resistance is 105mOhm at a gate-source voltage of 10V and drain current of 24A, ensuring low conduction losses.
Q: How much power can the FDA50N50 dissipate?
A: It can handle a maximum power dissipation of 625W (Tc), making it ideal for high-power switching designs.
Q: What is the recommended gate drive voltage for this device?
A: The drive voltage is specified as 10V for achieving minimum Rds(on), with a maximum Vgs rating of ±20V.
Q: What is the input capacitance of the FDA50N50?
A: The maximum input capacitance (Ciss) is 6460pF at Vds = 25V, which affects switching speed and gate drive requirements.
Q: What package type is the FDA50N50 available in?
A: It is offered in a TO-3PN (TO-3P-3, SC-65-3) through-hole package, designed for efficient heat dissipation.
Q: Is the FDA50N50 suitable for high-temperature environments?
A: Yes, its operating temperature range is -55°C to 150°C (junction), ensuring stable performance in harsh conditions.
