FDMD86100

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FDMD86100

+BOM

POWER FIELD-EFFECT TRANSISTOR

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Specifications

Attribute Value
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series PowerTrench®
Part Status Active
FET Type 2 N-Channel (Dual) Common Source
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain(Id) @ 25°C 10A
Rds On(Max) @ Id Vgs 10.5mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 30nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 2060pF @ 50V
Power - Max 2.2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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