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FDN86265P
+BOMMOSFET P-CH 150V 800MA SUPERSOT3
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Manufactureronsemi
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Mfr. Part #FDN86265P
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In Stock2443
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Specifications
| Attribute | Value |
| Series | PowerTrench® |
| Part Status | Active |
| Base Product Number | FDN86265 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 800mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 75 V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Overview
Description
The FDN86265P is an N-channel MOSFET from ON Semiconductor, designed for low-voltage, high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): ~25 mΩ (at VGS = 4.5V), reducing power loss.
- Compact Package: PowerDI® 123, ideal for space-constrained designs.
- Voltage Rating: 20V drain-to-source (VDSS), suitable for 5V–12V systems.
- Fast Switching: Optimized for high-frequency applications like DC-DC converters, load switches, and power management.
- Low Gate Charge (QG): Enhances efficiency in high-speed switching.
Common uses include battery protection, motor control, and portable electronics. Its small footprint and low RDS(on) make it a popular choice for energy-efficient designs.
For detailed specs, refer to the datasheet on ON Semiconductor’s website.
- Low On-Resistance (RDS(on)): ~25 mΩ (at VGS = 4.5V), reducing power loss.
- Compact Package: PowerDI® 123, ideal for space-constrained designs.
- Voltage Rating: 20V drain-to-source (VDSS), suitable for 5V–12V systems.
- Fast Switching: Optimized for high-frequency applications like DC-DC converters, load switches, and power management.
- Low Gate Charge (QG): Enhances efficiency in high-speed switching.
Common uses include battery protection, motor control, and portable electronics. Its small footprint and low RDS(on) make it a popular choice for energy-efficient designs.
For detailed specs, refer to the datasheet on ON Semiconductor’s website.
Equivalent
Equivalent products to the FDN86265P (P-channel MOSFET) include:
- SI2301DS (Vishay)
- DMG2305UX (Diodes Inc.)
- AO3401A (Alpha & Omega)
- BSS84 (NXP/Infineon)
These are P-channel MOSFETs with similar specs (~-20V, -4A, low RDS(on)). Verify pinout and parameters for exact compatibility.
- SI2301DS (Vishay)
- DMG2305UX (Diodes Inc.)
- AO3401A (Alpha & Omega)
- BSS84 (NXP/Infineon)
These are P-channel MOSFETs with similar specs (~-20V, -4A, low RDS(on)). Verify pinout and parameters for exact compatibility.
Features
The FDN86265P is an N-channel PowerTrench MOSFET by ON Semiconductor, designed for high-efficiency power management. Key features:
- Voltage Rating: 30V
- Current Rating: 12A (continuous)
- Low On-Resistance: 9.3mΩ (max @ VGS=10V)
- Fast Switching: Low gate charge (QG=18nC) and low input/output capacitance for efficient high-frequency operation.
- Power Dissipation: 2.5W (max)
- Package: Compact Power33 (3.3mm x 3.3mm) for space-constrained designs.
- Applications: Ideal for DC-DC converters, load switches, and motor control in portable electronics, servers, and automotive systems.
Its PowerTrench technology ensures low conduction and switching losses, enhancing thermal performance.
- Voltage Rating: 30V
- Current Rating: 12A (continuous)
- Low On-Resistance: 9.3mΩ (max @ VGS=10V)
- Fast Switching: Low gate charge (QG=18nC) and low input/output capacitance for efficient high-frequency operation.
- Power Dissipation: 2.5W (max)
- Package: Compact Power33 (3.3mm x 3.3mm) for space-constrained designs.
- Applications: Ideal for DC-DC converters, load switches, and motor control in portable electronics, servers, and automotive systems.
Its PowerTrench technology ensures low conduction and switching losses, enhancing thermal performance.
Pinout
The FDN86265P is a dual N-channel MOSFET in an 8-pin SOIC package.
Pin Functions:
1. Pin 1 (D1): Drain of MOSFET 1
2. Pin 2 (G1): Gate of MOSFET 1
3. Pin 3 (S1): Source of MOSFET 1
4. Pin 4 (S2): Source of MOSFET 2
5. Pin 5 (G2): Gate of MOSFET 2
6. Pin 6 (D2): Drain of MOSFET 2
7. Pin 7 (NC): No connection (may be tied to GND)
8. Pin 8 (NC): No connection (may be tied to GND)
Key Features:
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on))
- Logic-level gate drive
Commonly used in power switching, DC-DC converters, and load management.
Pin Functions:
1. Pin 1 (D1): Drain of MOSFET 1
2. Pin 2 (G1): Gate of MOSFET 1
3. Pin 3 (S1): Source of MOSFET 1
4. Pin 4 (S2): Source of MOSFET 2
5. Pin 5 (G2): Gate of MOSFET 2
6. Pin 6 (D2): Drain of MOSFET 2
7. Pin 7 (NC): No connection (may be tied to GND)
8. Pin 8 (NC): No connection (may be tied to GND)
Key Features:
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on))
- Logic-level gate drive
Commonly used in power switching, DC-DC converters, and load management.
Application
The FDN86265P is a P-channel MOSFET commonly used in:
1. Power Management – Switching and load control in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in compact circuits.
4. Motor Control – Driving small motors in consumer electronics.
5. Load Switching – On/off control in USB, GPIO, and low-voltage systems.
Its low on-resistance (RDS(on)) and compact package (SOT-23) make it ideal for space-constrained, energy-efficient applications.
1. Power Management – Switching and load control in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in compact circuits.
4. Motor Control – Driving small motors in consumer electronics.
5. Load Switching – On/off control in USB, GPIO, and low-voltage systems.
Its low on-resistance (RDS(on)) and compact package (SOT-23) make it ideal for space-constrained, energy-efficient applications.
Package
The FDN86265P is a P-channel MOSFET from ON Semiconductor, available in a Power33 package. This compact surface-mount package (3.3mm x 3.3mm) is designed for high-power applications with efficient thermal performance. It features a leadless design for improved PCB space utilization and heat dissipation.
