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FQA9N90C
+BOMMOSFET N-CH 900V 9A TO3P
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Manufactureronsemi
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Mfr. Part #FQA9N90C
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In Stock4894
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Specifications
| Attribute | Value |
| Series | QFET® |
| Part Status | Obsolete |
| Base Product Number | FQA9 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2730 pF @ 25 V |
| Power Dissipation (Max) | 280W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
| Package | TO-3P-3, SC-65-3 |
| Packaging | Tube |
Overview
Description
### Key Features:
- Voltage Rating: 900V (Drain-Source)
- Current Rating: 9A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): ~1.35Ω (max)
- Fast Switching: Optimized for efficiency in power supplies, inverters, and motor drives.
- Avalanche Energy Rated: Enhances reliability in high-stress conditions.
### Applications:
- Switched-Mode Power Supplies (SMPS)
- AC-DC Converters
- Motor Control & Inverters
- Industrial & Consumer Electronics
### Package:
- TO-220F (Fully Insulated) – Improves thermal performance and safety.
This MOSFET is ideal for high-voltage, medium-power applications requiring robust performance and efficiency.
Equivalent
- STP9NK90Z (STMicroelectronics)
- IRF9N90 (Infineon)
- IXFH9N90 (IXYS)
- FCP9N90 (Fairchild/ON Semi)
These alternatives offer similar voltage, current, and switching characteristics. Always verify datasheets for exact compatibility.
Features
- Voltage Rating: 900V
- Current Rating: 9A (continuous)
- Low On-Resistance (RDS(on)): 1.35Ω (max) @ 10V
- Fast Switching: Optimized for high-speed applications
- Low Gate Charge (Qg): Reduces switching losses
- Avalanche Energy Rated: Enhances ruggedness
- TO-220F Package: Efficient thermal performance
- Applications: Power supplies, motor drives, inverters
Designed for high-voltage, high-efficiency systems, it balances performance and reliability.
Pinout
Pin Functions:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the high-voltage load.
3. Source (S) – Ground/reference terminal.
This MOSFET is designed for high-voltage, high-speed switching applications such as power supplies and motor drives. It features low on-resistance (RDS(on)) and fast switching performance.
Manufacturer
onsemi is a global semiconductor company specializing in energy-efficient technologies, including power management, analog, and sensor solutions. It serves industries like automotive, industrial, and consumer electronics, focusing on innovation and sustainability.
The FQA9N90C is designed for high-voltage, high-speed switching applications, commonly used in power supplies and motor controls.
Package
Frequently Asked Questions
Q: What is the maximum drain-source voltage rating of the FQA9N90C?
A: The FQA9N90C has a drain-to-source voltage (Vdss) rating of 900V, suitable for high-voltage applications.
Q: What is the continuous drain current capability at 25°C?
A: It can handle a continuous drain current (Id) of 9A at a case temperature (Tc) of 25°C.
Q: What is the typical on-resistance (Rds(on)) for this MOSFET?
A: The maximum Rds(on) is 1.4 Ohms at a drain current of 4.5A and gate-source voltage of 10V.
Q: What gate charge (Qg) is required to fully turn on the device?
A: The maximum gate charge is 58 nC at Vgs = 10V, indicating moderate drive requirements.
Q: What is the maximum power dissipation and operating temperature range?
A: It dissipates up to 280W and operates from -55°C to 150°C junction temperature.
Q: Is this part suitable for through-hole PCB mounting?
A: Yes, it features a Through Hole mounting type in a TO-3P package for robust power applications.
Q: What is the input capacitance (Ciss) for switching frequency estimation?
A: The maximum input capacitance is 2730 pF at Vds = 25V, useful for gate driver design.
