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FQB5N50CTM
+BOMMOSFET N-CH 500V 5A D2PAK
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Manufactureronsemi
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Mfr. Part #FQB5N50CTM
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Datasheet FQB5N50CTM DataSheet
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In Stock2005
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Specifications
| Attribute | Value |
| Series | QFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 25 V |
| Power Dissipation (Max) | 73W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | FQB5N50 |
Overview
Description
The FQB5N50CTM is a high-voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. With a maximum voltage rating of 500V and a continuous drain current of 5A, it is suitable for various switching and amplification tasks in power management systems.
Key features include low on-resistance, which enhances efficiency by minimizing power loss during operation. Its fast switching speed makes it ideal for applications such as power supplies, inverters, and motor drives. The FQB5N50CTM is housed in a TO-220 package, facilitating effective heat dissipation and ease of mounting on circuit boards.
This MOSFET is particularly valued in industries requiring reliable high-voltage performance, such as renewable energy systems and industrial automation. Its robust construction ensures durability and stability under challenging operating conditions. Overall, the FQB5N50CTM is a versatile component for engineers designing efficient power electronic systems.
Key features include low on-resistance, which enhances efficiency by minimizing power loss during operation. Its fast switching speed makes it ideal for applications such as power supplies, inverters, and motor drives. The FQB5N50CTM is housed in a TO-220 package, facilitating effective heat dissipation and ease of mounting on circuit boards.
This MOSFET is particularly valued in industries requiring reliable high-voltage performance, such as renewable energy systems and industrial automation. Its robust construction ensures durability and stability under challenging operating conditions. Overall, the FQB5N50CTM is a versatile component for engineers designing efficient power electronic systems.
Equivalent
The FQB5N50CTM is an N-channel MOSFET used for switching and amplification applications. Equivalent products include the IRF840, STP5NK50Z, and MTP5N50E. When selecting a substitute, ensure similar voltage ratings (500V), current ratings (5A), and R_DS(on) specifications for compatibility in your application. Always consult datasheets for precise comparisons.
Features
The FQB5N50CTM is a power MOSFET designed for high-voltage applications, specifically offering a maximum drain-source voltage (V_DS) of 500V. It features a continuous drain current (I_D) rating of 5A, making it suitable for various power switching applications. This device is characterized by a low on-resistance (R_DS(on)) which helps in reducing conduction losses, enhancing efficiency in circuits.
Additionally, the FQB5N50CTM has a fast switching speed, making it ideal for use in power supplies, inverters, and motor control applications. It is encapsulated in a TO-220 package, facilitating easier heat dissipation during operation. The gate threshold voltage (V_GS(th)) is typically within the range of 2-4V, ensuring compatibility with standard driving voltages.
Overall, the FQB5N50CTM is engineered for reliability and performance in demanding environments, making it a popular choice for engineers in the field of power electronics.
Additionally, the FQB5N50CTM has a fast switching speed, making it ideal for use in power supplies, inverters, and motor control applications. It is encapsulated in a TO-220 package, facilitating easier heat dissipation during operation. The gate threshold voltage (V_GS(th)) is typically within the range of 2-4V, ensuring compatibility with standard driving voltages.
Overall, the FQB5N50CTM is engineered for reliability and performance in demanding environments, making it a popular choice for engineers in the field of power electronics.
Pinout
The FQB5N50CTM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a pin count of 3. The pins are typically configured as follows:
1. Gate (G): This pin controls the MOSFET's operation, allowing it to switch on or off by applying a voltage.
2. Drain (D): This pin connects to the load and is where the current flows out of the device.
3. Source (S): This pin is connected to the ground or the negative side of the circuit and is where the current enters the MOSFET.
The FQB5N50CTM is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of up to 5A. It's commonly used in power supply circuits, motor controls, and various switching applications.
1. Gate (G): This pin controls the MOSFET's operation, allowing it to switch on or off by applying a voltage.
2. Drain (D): This pin connects to the load and is where the current flows out of the device.
3. Source (S): This pin is connected to the ground or the negative side of the circuit and is where the current enters the MOSFET.
The FQB5N50CTM is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of up to 5A. It's commonly used in power supply circuits, motor controls, and various switching applications.
Manufacturer
The FQB5N50CTM is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management devices, analog ICs, and discrete devices such as MOSFETs, like the FQB5N50CTM. The company serves various industries including automotive, industrial, communications, consumer electronics, and medical markets, focusing on energy-efficient solutions and advanced technologies. ON Semiconductor is known for its commitment to sustainability and innovation, offering products that enhance performance while reducing energy consumption. Founded in 1999 and based in Phoenix, Arizona, ON Semiconductor has grown through strategic acquisitions and development, establishing a significant presence in the semiconductor industry.
Application
The FQB5N50CTM is an N-channel MOSFET used primarily in power electronics applications. Its key areas include:
1. Switching Power Supplies: Utilized in converters and inverters for efficient power management.
2. Motor Drives: Employed in control circuits for DC and AC motors.
3. Power Management Circuits: Used in voltage regulation and load switch applications.
4. Lighting Control: Ideal for LED drivers and dimmers.
5. Consumer Electronics: Incorporated in various devices for energy efficiency.
Its high voltage and current ratings make it suitable for high-performance applications in industrial, automotive, and renewable energy systems.
1. Switching Power Supplies: Utilized in converters and inverters for efficient power management.
2. Motor Drives: Employed in control circuits for DC and AC motors.
3. Power Management Circuits: Used in voltage regulation and load switch applications.
4. Lighting Control: Ideal for LED drivers and dimmers.
5. Consumer Electronics: Incorporated in various devices for energy efficiency.
Its high voltage and current ratings make it suitable for high-performance applications in industrial, automotive, and renewable energy systems.
Package
The FQB5N50CTM is typically packaged in a TO-220 format. This package type is commonly used for power transistors, providing adequate thermal performance and allowing for easy mounting to heatsinks.
