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GD25D10CTIGR
+BOMIC FLASH 1MBIT SPI/DUAL I/O 8SOP
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ManufacturerGigaDevice Semiconductor (HK) Limited
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Mfr. Part #GD25D10CTIGR
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Package 8-SOIC (0.154, 3.90mm Width)
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In Stock7362
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR |
| MemorySize | 1Mb (128K x 8) |
| MemoryInterface | SPI - Dual I/O |
| ClockFrequency | 100 MHz |
| WriteCycleTime-WordPage | 50µs, 4ms |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Overview
Description
Key features of the GD25D10CTIGR include fast programming and erase times, low power consumption, and a wide operating temperature range, making it suitable for various industrial and consumer applications. The memory is organized in a page structure, facilitating efficient data management and retrieval. Additionally, the GD25D10CTIGR offers features such as block protection, which ensures data integrity and security.
Overall, the GD25D10CTIGR provides a compact and efficient solution for applications needing moderate-sized flash memory with reliable performance and ease of use.
Equivalent
Features
Key features include:
- 1 Mbit memory organized as 128K x 8 bits
- Fast read speeds with a page size of 256 bytes
- Sector Erase (4KB), Block Erase (32KB and 64KB), and Chip Erase options for flexible data management
- Supports JEDEC standard ID
- Low energy consumption with deep power-down mode
- Operating temperature range from -40°C to +85°C
- Small form factor packages like SOP8, making it suitable for compact designs
These features make the GD25D10CTIGR a versatile choice for applications requiring reliable non-volatile memory with efficient power management and easy integration.
Pinout
1. CS# (Chip Select): Activates the device when pulled low.
2. SO (Serial Data Output): Outputs data from the device.
3. WP# (Write Protect): Protects certain sections of the memory from writing.
4. VSS (Ground): Ground reference for the device.
5. SI (Serial Data Input): Inputs data to the device.
6. SCK (Serial Clock): Provides the clock signal for data transfers.
7. HOLD# (Hold): Pauses any serial communication without resetting the device.
8. VCC (Power Supply): Supplies power to the device.
These pins facilitate the serial communication required for reading and writing operations, making the GD25D10CTIGR suitable for applications requiring non-volatile memory storage.