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IR2181STRPBF
+BOMIC GATE DRVR HALF-BRIDGE 8SOIC
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ManufacturerInfineon Technologies
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Mfr. Part #IR2181STRPBF
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Datasheet IR2181STRPBF DataSheet
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Package SOIC-8
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In Stock2839
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VILVIH | 0.8V, 2.7V |
| Current - Peak Output(Source Sink) | 1.9A, 2.3A |
| Input Type | Non-Inverting |
| High Side Voltage - Max(Bootstrap) | 600 V |
| Rise / Fall Time(Typ) | 40ns, 20ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Overview
Description
The IR2181STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It is designed to drive N-channel MOSFETs or IGBTs in a half-bridge configuration, which is often used in DC-DC converters, motor control, and other power management applications. The device features independent high-side and low-side referenced output channels, providing efficient switching capability with minimized turn-on and turn-off delays.
Key features of the IR2181STRPBF include:
- Floating channel capability for bootstrap operation up to 600V.
- Tolerant to negative transient voltage, dV/dt immune.
- Undervoltage lockout for both channels.
- Matched propagation delay for both channels.
- Low quiescent current.
- High-side output in phase with input.
- CMOS Schmitt-triggered inputs with pull-down.
These attributes make the IR2181STRPBF suitable for robust, reliable, and efficient operation in high-voltage environments. Additionally, the device comes in a surface-mount SOIC-8 package, facilitating compact and space-efficient circuit designs.
Key features of the IR2181STRPBF include:
- Floating channel capability for bootstrap operation up to 600V.
- Tolerant to negative transient voltage, dV/dt immune.
- Undervoltage lockout for both channels.
- Matched propagation delay for both channels.
- Low quiescent current.
- High-side output in phase with input.
- CMOS Schmitt-triggered inputs with pull-down.
These attributes make the IR2181STRPBF suitable for robust, reliable, and efficient operation in high-voltage environments. Additionally, the device comes in a surface-mount SOIC-8 package, facilitating compact and space-efficient circuit designs.
Equivalent
The IR2181STRPBF is a high-side and low-side gate driver IC. Equivalent products include the IR2110IR2113 FAN7392, and L6386. These alternatives offer similar functionalities for driving power MOSFETs or IGBTs in half-bridge configurations. However, it's crucial to compare their specifications like drive capability, propagation delay, and supply voltage to ensure compatibility with your application. Always verify compatibility with the specific requirements of your circuit.
Features
The IR2181STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels. Key features include:
1. Floating Channel: Designed for bootstrap operation, allowing the high-side driver to operate at up to 600V.
2. Gate Drive Supply Range: Compatible with gate drive supply voltages ranging from 10V to 20V.
3. Logic Inputs: Operate on standard logic levels, making them easy to interface with most digital controllers.
4. Deadtime Protection: Built-in deadtime circuitry prevents the shorting of high- and low-side MOSFETs or IGBTs.
5. Under-Voltage Lockout (UVLO): Protects the device by preventing operation when supply voltage levels are too low.
6. Matched Propagation Delays: Ensures synchronous operation of high- and low-side drivers.
7. Bootstrap Capable: Simplifies high-side gate drive with a bootstrap diode and capacitor.
8. Low Power Consumption: Designed for efficiency, reducing heat generation and improving overall system performance.
These features make the IR2181STRPBF suitable for various applications, including motor drives, power supplies, and DC-DC converters.
1. Floating Channel: Designed for bootstrap operation, allowing the high-side driver to operate at up to 600V.
2. Gate Drive Supply Range: Compatible with gate drive supply voltages ranging from 10V to 20V.
3. Logic Inputs: Operate on standard logic levels, making them easy to interface with most digital controllers.
4. Deadtime Protection: Built-in deadtime circuitry prevents the shorting of high- and low-side MOSFETs or IGBTs.
5. Under-Voltage Lockout (UVLO): Protects the device by preventing operation when supply voltage levels are too low.
6. Matched Propagation Delays: Ensures synchronous operation of high- and low-side drivers.
7. Bootstrap Capable: Simplifies high-side gate drive with a bootstrap diode and capacitor.
8. Low Power Consumption: Designed for efficiency, reducing heat generation and improving overall system performance.
These features make the IR2181STRPBF suitable for various applications, including motor drives, power supplies, and DC-DC converters.
Pinout
The IR2181STRPBF is a high and low side driver IC manufactured by Infineon Technologies. It is typically used for driving MOSFETs and IGBTs in bridge and half-bridge configurations. The IC comes in an 8-pin SOIC package and includes the following pins:
1. VB: High-side floating supply voltage.
2. VS: High-side floating supply return.
3. HO: High-side gate drive output.
4. VCC: Low-side and logic fixed supply voltage.
5. COM: Low-side return and logic ground.
6. LO: Low-side gate drive output.
7. HIN: High-side logic input.
8. LIN: Low-side logic input.
The IR2181STRPBF provides high voltage and high-speed capabilities, with a floating channel designed for bootstrap operation. It is commonly used in applications involving motor control, power supply units, and DC-DC converters due to its ability to drive high and low side MOSFETs efficiently.
1. VB: High-side floating supply voltage.
2. VS: High-side floating supply return.
3. HO: High-side gate drive output.
4. VCC: Low-side and logic fixed supply voltage.
5. COM: Low-side return and logic ground.
6. LO: Low-side gate drive output.
7. HIN: High-side logic input.
8. LIN: Low-side logic input.
The IR2181STRPBF provides high voltage and high-speed capabilities, with a floating channel designed for bootstrap operation. It is commonly used in applications involving motor control, power supply units, and DC-DC converters due to its ability to drive high and low side MOSFETs efficiently.
Manufacturer
The IR2181STRPBF is manufactured by Infineon Technologies. Infineon is a leading global semiconductor company known for designing, developing, manufacturing, and marketing a broad range of semiconductor solutions. These solutions cater to various markets, including automotive, industrial power control, power management, and digital security. Infineon is recognized for its innovation and expertise in power semiconductors, microcontrollers, sensors, and security ICs, among other technologies.
Application
The IR2181STRPBF is a high-speed power MOSFET and IGBT driver designed for use in various applications that require efficient switching and control. Its application areas include motor control (such as in electric vehicles and industrial machinery), uninterruptible power supplies (UPS), switch-mode power supplies (SMPS), solar inverters, and other power conversion systems. It is particularly useful in situations where isolated high-side and low-side gate drive is required, offering protection and robust performance in demanding environments. Its ability to handle high voltages and fast switching speeds makes it an ideal choice for applications that demand high efficiency and reliability.
Package
The IR2181STRPBF is a high and low side driver IC typically used in motor control and power supply applications. It comes in an SOIC-8 (Small Outline Integrated Circuit) package, which is a surface-mount package with 8 leads.
